III-V Compound Semicondutors-Especially on GaP
نویسندگان
چکیده
منابع مشابه
III−V Compound Semiconductor Nanopillars Monolithically Integrated to Silicon Photonics
We propose a platform based on III−V compound semiconductor nanopillars monolithically integrated with silicon photonics. Nanopillars were grown in a process free of metal catalysts onto silicon at low temperature, and a bottom-up process was applied to define the photonic integrated circuit. Stimulated and spontaneous emissions from the nanopillars are direct coupled to silicon waveguides.
متن کاملProgress in Antimonide Based III-V Compound Semiconductors and Devices
In recent years, the narrow bandgap antimonide based compound semiconductors (ABCS) are widely regarded as the first candidate materials for fabrication of the third generation infrared photon detectors and integrated circuits with ultra-high speed and ultra-low power consumption. Due to their unique bandgap structure and physical properties, it makes a vast space to develop various novel devic...
متن کاملSilicon and III-V compound nanotubes: Structural and electronic properties
Unusual physical properties of single-wall carbon nanotubes have started a search for similar tubular structures of other elements. In this paper, we present a theoretical analysis of single-wall nanotubes of silicon and group-III-V compounds. Starting from precursor graphenelike structures we investigated the stability, energetics, and electronic structure of zigzag and armchair tubes using th...
متن کاملIII–V compound semiconductors for mass-produced nano-electronics: theoretical studies on mobility degradation by dislocation
As silicon-based electronics approach the limit of scaling for increasing the performance and chip density, III-V compound semiconductors have started to attract significant attention owing to their high carrier mobility. However, the mobility benefits of III-V compounds are too easily accepted, ignoring a harmful effect of unavoidable threading dislocations that could fundamentally limit the a...
متن کاملLignin Peroxidase Compound III
Lignin peroxidase compound III (LiPIII) was prepared via three procedures: (a) ferrous LiP + O2 (LiPIIIa), (b) ferric LiP + 0; (LiPIIIb), and (c) LiP compound II + excess HzOz followed by treatment with catalase (LiPIIIc). LiPIIIa, h, and c each have a Soret maximum at -414 nm and visible hands at 543 and 578 nm. LiPIIIa, b, and c each slowly reverted to native ferric Lip, releasing stoichiomet...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: The Journal of the Society of Chemical Industry, Japan
سال: 1962
ISSN: 0023-2734,2185-0860
DOI: 10.1246/nikkashi1898.65.11_1708